Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser
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چکیده
the realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns. PACS number : 42.55.Xi ; 42.60.Gd
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تاریخ انتشار 2006